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Showing items 101-125 of 144 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
淡江大學 |
2011-12 |
Electronic structure, electron field emission and magnetic behaviors of carbon nanotube fabricated on La0.66Sr0.33MnO3 (LSMO) base layer
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Ray, S.C.; Wu, S.L.; Tsai, M.H.; Okpalugo, T.I.T.; Ling, D.C.;Pong, W.F. |
國立成功大學 |
2011-11 |
GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer
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Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Jung, S.-C.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S.-L. |
實踐大學 |
2011 |
GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
實踐大學 |
2011 |
GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
國立臺灣科技大學 |
2011 |
Cross-layer and cognitive QoS management system for next-generation networking
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Chen, J.L.;Liu, S.W.;Wu, S.L.;Chen, M.C. |
國立成功大學 |
2011 |
GaN MSM UV Photodetectors with an Al(0.82)In(0.18)N Intermediate Layer
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Huang, Z. D.; Weng, W. Y.; Chang, S. J.; Chiu, C. J.; Hsueh, T. J.; Lai, W. C.; Wu, S. L. |
國立成功大學 |
2011 |
InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers
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Lee, K.-H.;Chang, P.-C.;Chang, S.-J.;Wu, S.-L. |
國立成功大學 |
2011 |
GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer
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Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S. L. |
淡江大學 |
2010-12 |
Anomalous Zn- and Ni-substitution effects on superconductivity in the superconducting weak ferromagnets RuSr2RCu2O8 (R = Gd, Eu)
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Ling, D.C.; Wu, S.L.; Lin, M.H.; Chien, F.Z. |
淡江大學 |
2010-05 |
High coercivity magnetic multi-wall carbon nanotubes for low-dimensional high-density magnetic recording media
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Ray, S.C.; Bhattacharyya, S.; Wu, S.L.; Ling, D.C.; Pong, W.F.; Giorcelli, M; Bianco, S.; Tagliaferro, A. |
國立臺灣科技大學 |
2010 |
Adaptive cross-layer QoS mechanism for cognitive network applications
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Liu S.-W.; Wu S.-L.; Chen J.-L. |
國立臺灣科技大學 |
2010 |
GaN schottky barrier photodetectors prepared on patterned sapphire substrate
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Chang S.J.; Wang S.M.; Chen T.P.; Young S.J.; Lin Y.C.; Wu S.L.; Huang B.R. |
國立成功大學 |
2009-05 |
Characterization of AlGaN/GaN Metal-Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer
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Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wang, Y. C.; Yu, C. L.; Wu, S. L. |
國立成功大學 |
2009-04-15 |
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
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Weng, W. Y.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.; Hung, S. C. |
國立成功大學 |
2009-01 |
AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer
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Chang, Shoou-Jinn; Lee, K. H.; Chang, Ping-Chuan; Wang, Y. C.; Kuo, C. H.; Wu, S. L. |
實踐大學 |
2009 |
Investigation of interface characteristics in strained-Si nMOSFETs
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Kuo, C.W.;Wu, S.L.;Chang, S.J.;Lin, H.Y.;Wang, Y.P.;Hung, S.C. |
實踐大學 |
2009 |
DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique
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Lin, H.Y.;Wu, S.L.;Chang, S.J.;Kuo, C.W.;Wang, Y.P.;Hung, S.C. |
實踐大學 |
2009 |
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
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Weng, W.Y.;Chang, S.J.;Lai, W.C.;Hsueh, T.J.;Shei, S.C.;Zeng, X.F.;Wu, S.L.;Hung, S.C. |
國立臺灣科技大學 |
2009 |
Electronic ballast with digital dimming control for multiple T5 fluorescent lamps
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Chen L.-R.; Wu S.-L.; Chu N.-Y.; Hsiao Y.-C.; Chen T.-R. |
國立成功大學 |
2009 |
Al0.25Ga0.75N/GaN Schottky Barrier Photodetectors with an Al0.3Ga0.7N Intermediate Layer
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Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, Y. C.; Yu, C. L.; Wu, S. L. |
國立成功大學 |
2009 |
GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes
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Weng, W. Y.; Chuang, Ricky W.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L. |
國立成功大學 |
2009 |
AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm
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Lee, H. C.; Su, Yan-Kuin; Lin, J. C.; Cheng, Y. C.; Wu, S. L.; Jhou, Y. D. |
國立成功大學 |
2008-09 |
GaN-Based Schottky Barrier Photodetectors With a 12-Pair MgxNy-GaN Buffer Layer
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Chang, Shoou-Jinn; Lee, K. H.; Chang, Ping-Chuan; Wang, Y. C.; Yu, C. L.; Kuo, C. H.; Wu, S. L. |
國立成功大學 |
2008-09 |
GaN Metal-Semiconductor-Metal Photodetectors With SiN/GaN Nucleation Layer
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Su, Yan-Kuin; Chang, Shoou-Jinn; Jhou, Y. D.; Wu, S. L.; Liu, C. H. |
國立成功大學 |
2008 |
GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes
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Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Yu, C. L.; Wang, Y. C.; Wu, S. L. |
Showing items 101-125 of 144 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
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